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Super Beam type LED SMB850-1100-03
High Power type Top LED with Lens
SMB850-1100-03 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package
and molded with super beam lens. On forward bias, it emits a band of radiation which
peaks 850nm. These devices are intended to be operated at pulsed current of 4A under
maximum 3.3V for stable long life.?
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Specifications |
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Product Name |
Super Flux mold type LED
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Type No. |
SMB850-1100-03
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Chip |
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Chip Material |
GaAlAs
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Chip Dimension |
1000um*1000um
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Peak Wavelength |
850nm typ.
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Package |
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Type |
Super Beam type LED
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Resin Material |
Epoxy Resin
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Lead Frame |
Silver Plated Cupper
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Outer dimension (Unit: mm)
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Absolute Maximum Ratings
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Item |
Symbol |
Maximum Rated Value |
Unit |
Ambient Temperature |
| Power Dissipation | PD | 1000 | mW | Ta=25°C |
| Forward Current | IF | 600 | mA | Ta=25°C |
| Pulse Forward Current | IFP | 4000 | mA | Ta=25°C |
| Reverse Voltage | VR | 10 | V | Ta=25°C |
| Operating Temperature | TOPR | -30 ~ +85 | °C | |
| Storage Temperature | TSTG | -30 ~ +100 | °C | |
| Soldering Temperature | TSOL | 265 | °C | |
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 265°C
Electro-Optical Characteristics [Ta=25°C]
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Item |
Symbol |
Condition |
Minimum |
Typical |
Maximum |
Unit |
| Forward Voltage | VF | IF=200mA | | 1.45 | 1.7 | V |
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Pulsed Forward Voltage |
VF |
IFP=4A |
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3.3 |
4.5 |
V |
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Reverse Current |
IR |
VR=10V |
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10 |
uA |
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Total Radiated Power |
PO |
IF=200mA |
35.0 |
60 |
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mW |
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Radiant Intensity |
IE |
IF=200mA |
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100 |
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mW/sr |
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Peak Wavelength |
P |
IF=50mA |
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850 |
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nm |
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Half Width |
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IF=50mA |
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40 |
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nm |
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Viewing Half Angle |
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IF=50mA |
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±12 |
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deg. |
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Rise Time |
tr |
IF=50mA |
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15 |
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ns |
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Fall Time |
tf |
IF=50mA |
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10 |
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ns |
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
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