Near Infrared InGaAs

PD1300-35D00-I: PDF

PD1300-35D00-I is InGaAs PIN-Photodiode featuring excellent responsibility and high
photocurrent for near infrared.
This PIN-Photodiode consists of a large chip with 0.35×0.35mm active area mounted on the
TO-18 stem and is sealed by epoxy resin lens.
These devices are designed to be easy of setting up optically with a wide angle of half
sensitivity of ±60°.

Active Area:0.35mmx0.35mm
Package Type: TO-18 (3pins)
Lens: Epoxy Resin
Cap: Gold Plated

  Absolute Maximum Ratings [Ta=25ºC]
 Item Symbol Maxmum Rated Value Unit
 Reverse Breakdown Voltage  VR  10  V
 Operating Temperature TOPR -20 ~ +90  ºC
 Storage Temperature TSTG  -30 ~ +100  ºC
 Soldering Temperature* TSOL  260  ºC

* Soldering condition must be completed within 2 secondsat 240ºC

Electro-Optica Characteristics [Ta=25ºC]
 Item  Symbol Condition Minimum Typical Maximum Unit
Photo Responsibility RE VR=oV, λP=1300nm 0.9 A/W
Photo Current*  IL VR=oV, λP=1300nm  10  μA
Dark Current  ID VR=1V 100  nA
 Spectral Responsibility (Peak) λP  VR=0V  1000 1600  nm
 Half Angle of Sensitivity θ½  VR=oV  ±60  deg
Total Capacitance CT F=1MHz, VR=1V  20 pF
 Rise Time(10%~90%) tr  RL=1kΩ, VR=1V  10  ns
 Fall Time(10%~90%) tf  5  ns

* Measured by Epitex’s calibrated tool