InGaAs PIN-Photodiode

PD1300-35D32-I: Φ5 Stem Type

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PD1300-35D32-I is InGaAs PIN-Photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-Photodiode consists of a large chip with 0.35×0.35mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with glass ball lens. These devices are designed to be high photocurrent gains with an angle of half sensitivity of ±15°.

Feature: High Reliability, High Response

Active Area:0.35mmx0.35mm

Package Type: TO-18 (3pins)

Lens: Glass Ball

Cap: Gold Plated

  Absolute Maximum Ratings [Ta=25ºC]
 Item Symbol Maxmum Rated Value Unit
 Reverse Breakdown Voltage VR  15  V
 Operating Temperature TOPR -20 ~ +90  ºC
 Storage Temperature TSTG  -30 ~ +100  ºC
 Soldering Temperature* TSOL  265  ºC

* Soldering condition must be completed within 3 secondsat 265ºC

Electro-Optica Characteristics [Ta=25ºC]
 Item  Symbol Condition Minimum Typical Maximum Unit
Photo Responsibility RE VR=0V, λP=1300nm 0.9 A/W
Photo Current*  IL VR=0V, λP=1300nm 26  μA
Dark Current  ID VR=3V 100  nA
 Spectral Responsibility (Peak) λP  VR=0V  1000  1600  nm
 Half Angle of Sensitivity θ½  VR=0V  ±15  deg
Total Capacitance CT F=1MHz VR=0V 50 pF
VR=5V 15
 Rise Time(10%~90%) tr  RL=1kΩ, VR=1V 10  ns
 Fall Time(10%~90%) tf 5  ns

* Measured by Epitex’s calibrated tool

Other Products:

Product#  Active Area(mm2) Peak Spectral Response(nm) Reverse Photo Current(mA)  Half Angle Sensitivity
PD1300-35D52-I   0.35×0.35  1300      10  ±40º 
PD1300-35T00  10  ±60º
PD1300-35T32  25  ±15º
PD1300-35T52  10  ±40º
PD1300-130D32-I  F1.0dia  160  ±15º
PD1450-35T32   0.35×0.35    1450    10  ±40º
PD1450-35T54  10  ±40º
PD1450-35F59  20  ±58º