EDC

Marubeni  launches the new Power EDC Series SMD package platform. Offered in the widest spectrum of LED emitters in the industry, ranging from 260nm λP to 1600nm λP. The new EDC Series can be used to package any LED in this spectrum. Example: the EDC740D-1100 mounts a 1 x 1mm AllnGaP Die that emits at 740 λP with a typical Radiant intensity of 440 mW/sr & Radiated Power of 1040mW. UV, Visible (including White Light), or other IR Power LED Die can also be used in this small SMD leadless package. With highly durable silicone lens technology, a Thermal Resistance (Rthj) of 10K/W, and a Power Dissipation of 2000 mW, the EDC Series may be your best choice.

 

Lens Type and Radiation Characteristics

Standard Type   S5 Lens  
Over View   edc-1-1 edc1  edc2-1 edc2
 Radiation
Characteristics
 edc-1  edc-2

e.g. EDC850DS Series

 

Lead(Pb) Free Product – RoHS Compliant

Peak Wavelength  Flat Type -S5 Lens
365nm EDC365V-1100 EDC365V-1100-S5Z
 375nm EDC375V-1100Z EDC375V-1100-S5Z
395nm EDC395V-1100 EDC395V-1100-S5
405nm EDC405H-1100 EDC405H-1100-S5
EDC405V-1100 EDC405V-1100-S5
630nm  EDC630-1100 EDC630-1100-S5
EDC630V-1100
660nm EDC660D-1100 EDC660D-1100-S5
 680nm EDC680D-1100
 690nm EDC690D-1100  EDC690D-1100-S5
 740nm EDC740D-1100 EDC740D-1100-S5
  750nm EDC750D-1100 EDC750-1100-S5
EDC750D-1100-S5
 760nm EDC760D-1100  EDC760D-1100-S5
 780nm EDC780D-1100  EDC780D-1100-S5
 800nm EDC800D-1100
 810nm   EDC810D-1100 EDC810D-1100-S5
EDC810DS-1070-S5
 850nm  EDC850D-1100 EDC850D-1100-S5
EDC850DS-1100 EDC850DS-1100-S5
890nm EDC890DS-1100-S5
 910nm EDC910D-1100  EDC910D-1100-S5
 940nm EDC940D-1100  EDC940D-1100-S5
 980nm EDC980D-1100  EDC980D-1100-S5
1050nm EDC1050-1100 EDC1050-1100-S5
1200nm EDC1200-1100 EDC1200-1100-S5
1300nm EDC1300-1100 EDC1300-1100-S5
1450nm EDC1450-1100 EDC1450-1100-S5
1550nm EDC1550-1100 EDC1550-1100-S5

 

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EDC365V-1100

EDC405-1100
EDC630-1100
EDC660-1100
EDC680-1100
EDC690-1100
EDC740-1100
EDC750-1100
EDC760-1100
EDC780-1100
EDC850-1100
New “Power White” Up to 260 Lumen SMD Led
Near-UV 405nm(λP) Power LED
Smallest, Highest POWER IR LED

EDC365V-1100

High Power Top LED : More Information

EDC365V-1100 is an AlInGaN LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 720mW at IFP=700mA.

Chip material: AlInGaN
Chip Dimension: 1000umx1000um
Chip Number: 1pc
Peak Wavelength: 365nm type
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2300 mW
 Forward Current IF 500 mA
 Pulse Forward Current* IFP 700 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C

* Duty=1% and Pulse Width=10µs ** Soldering condition must be completed within 5 seconds at 250°C

    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=500mA  3.7  4.5   V
 VFP  IFP=700mA  3.8
 Radiated Power*  PO  IF=500mA  500   mW
 IFP=700mA 720
 Peak Wavelength  λP   IF=500mA  360 365 370  nm
 Half Width  Δλ   IF=500mA  10  nm
 Viewing Half Angle  θ½  IF=100mA  ±65  deg
 Rise Time tr  IF=500mA  50  ns
 Fall Time tf IF=500mA 55 ns

* Measured by S3584-08

EDC405-1100

High Power Top LED : More Information

EDC405-1100 is an InGaN LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 1200mW at IFP=700mA.

Chip material: InGaN
Chip Dimension: 1000umx1000um
Chip Number: 1pc
Peak Wavelength: 405nm type
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2100 mW
 Forward Current IF 500 mA
 Pulse Forward Current* IFP 700 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C

* Duty=1% and Pulse Width=10µs ** Soldering condition must be completed within 3 seconds at 250°C

    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=500mA  3.6  4.2   V
 VFP  IFP=700mA  3.8
 Radiated Power*  PO  IF=500mA  900   mW
 IFP=700mA  1200
 Peak Wavelength  λP   IF=500mA  400  405  410  nm
 Half Width  Δλ   IF=500mA  12  nm
 Viewing Half Angle  θ½  IF=100mA  ±68  deg
 Rise Time tr  IF=500mA  55  ns
 Fall Time tf IF=500mA 75 ns

* Measured by S3584-08

 

EDC630V-1100

High Power Top LED :More Information

EDC630V-1100 is anAlGaIn LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 1270mW at IFP=2A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 630nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2000 mW
 Forward Current IF 700 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=350mA 2.2  2.8   V
 VFP  IFP=2A 3.2
 Radiated Power*  PO  IF=350mA  150 260   mW
 IFP=2A  1270
Radiant Intensity**  IE  IF=350mA  80  mW/sr
 IFP=2A 420
Luminous Flux ΦV IF=350mA 35 lm
IFP=2A 170
Peak Wavelength λP IF=350mA 620 630 640 nm
Dominant Wavekength λD IF=350mA 622 nm
 Half Width  Δλ IF=350mA  14  nm
 Viewing Half Angle  θ½  IF=100mA  ±65  deg
 Rise Time tr IF=350mA  75  ns
 Fall Time tf IF=350mA 110 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC660D-1100

High Power Top LED : More Information

EDC660D-1100 is anAlGaIn LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 710mW at IFP=1A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 660nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 1500 mW
 Forward Current IF 500 mA
 Pulse Forward Current* IFP 1000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=350mA 2.3  3.0   V
 VFP  IFP=1A 2.7
 Radiated Power*  PO  IF=350mA  150 250 mW
 IFP=1A 710
Radiant Intensity**  IE  IF=350mA  80 mW/sr
 IFP=1A 220
Luminous Flux ΦV IF=350mA 19 lm
IFP=1A 53
Peak Wavelength λP IF=350mA 650 660 670 nm
Dominant Wavekength λD IF=350mA 640 nm
 Half Width  Δλ IF=350mA 16 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=350mA 90 ns
 Fall Time tf IF=350mA 90 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC680D-1100

High Power Top LED : More Information

EDC680D-1100 is anAlGaAs LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 640mW at IFP=2A.

Chip material: AlGaAs
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 680nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 1800 mW
 Forward Current IF 600 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=600mA 2.4  (3.0)   V
 VFP  IFP=2A 3.6
 Radiated Power*  PO  IF=600mA 520 mW
 IFP=2A 1640
Radiant Intensity**  IE  IF=600mA 200 mW/sr
 IFP=2A 640
Peak Wavelength λP IF=600mA 670 680 690 nm
 Half Width  Δλ IF=600mA 22 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=600mA 65 ns
 Fall Time tf IF=600mA 75 ns

* Measured by S3584-08
** Measured by CIE217-2007 Condition B

EDC690D-1100

High Power Top LED : More Information

EDC690D-1100 is anAlGaAs LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 640mW at IFP=2A.

Chip material: AlGaAs
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 690nm
Lead Frame Die: Ceramics
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 1800 mW
 Forward Current IF 600 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=600mA 2.4  (3.0)   V
 VFP  IFP=2A 3.6
 Radiated Power*  PO  IF=600mA 520 mW
 IFP=2A 1640
Radiant Intensity**  IE  IF=600mA 200 mW/sr
 IFP=2A 640
Peak Wavelength λP IF=600mA 680 690 700 nm
 Half Width  Δλ IF=600mA 22 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=600mA 65 ns
 Fall Time tf IF=600mA 75 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC740D-1100

High Power Top LED : More Information ,  Other Product: EDC740D-1100-S5

EDC740D-1100 is anAlGaInP LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 440mW at IFP=2A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 740nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2000 mW
 Forward Current IF 800 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=600mA 2.0  2.4   V
 VFP  IFP=2A 2.7
 Radiated Power*  PO  IF=600mA 315 mW
 IFP=2A 1040
Radiant Intensity**  IE  IF=600mA 130 mW/sr
 IFP=2A 440
Peak Wavelength λP IF=600mA 730 740 750 nm
 Half Width  Δλ IF=600mA 24 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=600mA 65 ns
 Fall Time tf IF=600mA 75 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC750D-1100-S5

High Power Top LED : More Information

EDC750D-1100-S5 is anAlGaInP LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 1340mW at IFP=2A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 750nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2000 mW
 Forward Current IF 800 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=600mA 1.9  2.4   V
 VFP  IFP=2A 2.6
 Radiated Power*  PO  IF=600mA 345 mW
 IFP=2A 1100
Radiant Intensity**  IE  IF=600mA 420 mW/sr
 IFP=2A 1340
Peak Wavelength λP IF=600mA 740 750 760 nm
 Half Width  Δλ IF=600mA 22 nm
 Viewing Half Angle  θ½  IF=100mA  ±43 deg
 Rise Time tr IF=600mA 70 ns
 Fall Time tf IF=600mA 80 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC760D-1100

High Power Top LED : More Information

EDC760D-1100 is anAlGaInP LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 530mW at IFP=2A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 760nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2000 mW
 Forward Current IF 800 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=800mA 2.1  2.5   V
 VFP  IFP=2A 2.7
 Radiated Power*  PO  IF=800mA 490 mW
 IFP=2A 1200
Radiant Intensity**  IE  IF=800mA 220 mW/sr
 IFP=2A 530
Peak Wavelength λP IF=800mA 750 760 770 nm
 Half Width  Δλ IF=800mA 27 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=800mA 95 ns
 Fall Time tf IF=800mA 130 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC780D-1100

High Power Top LED : More Information

EDC780D-1100 is anAlGaInP LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 720mW at IFP=2A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 780nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2100 mW
 Forward Current IF 800 mA
 Pulse Forward Current* IFP 2000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=800mA 2.3  (2.6)   V
 VFP  IFP=2A 3.1
 Radiated Power*  PO  IF=800mA 620 mW
 IFP=2A 1500
Radiant Intensity**  IE  IF=800mA 300 mW/sr
 IFP=2A 720
Peak Wavelength λP IF=800mA 770 780 790 nm
 Half Width  Δλ IF=800mA 25 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=800mA 230 ns
 Fall Time tf IF=800mA 235 ns
* Measured by S3584-08

** Measured by CIE217-2007 Condition B

EDC850D-1100

High Power Top LED : More Information, Others Products: EDC850DS-1100, EDC850D-1100-S5, EDC850DS-1100-S5

EDC850D-1100 is an AlGaAs LED mounted on the 3.5×3.5mm ceramics package.
These devices are available to be operated and 170mW at IFP=3A.

Chip material: AlGaInP
Chip Dimension: 1000um x 1000um
Chip Number: 1pc
Peak Wavelength: 850nm
Lead Frame Die: Ceramics Package
Lens: Silicone Resin

 Absolute maximum Ratings [Ta=25°C]   
 Item Symbol Maximum Rated Valu Unit
 Power Dissipation PD 2500 mW
 Forward Current IF 1000 mA
 Pulse Forward Current* IFP 3000 mA
Reverse Voltage VR 5 V
Thermal Resistance Rthja 10 K/W
Junction Temperature Tj 120 °C
Operating Temperature TOPR -40 ~ +100 °C
Storage TEmperature TSTG -40 ~ +100  °C
Solding Temperature** TSOL 250 °C
* Duty=1% and Pulse Width=10µs
** Soldering condition must be completed within 3 seconds at 250°C
    Electro-Optical Characteristics [Ta=25°C type]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage  VF  IF=700mA 1.7  2.4   V
 IF=1000mA 1.8
VFP IFP=3A 2.7
 Radiated Power*  PO  IF=1000mA  450 600 mW
 IFP=3A 1700
Radiant Intensity**  IE  IF=1000mA 280 mW/sr
 IFP=3A 700
Peak Wavelength λP IF=1000mA 840 850 865 nm
 Half Width  Δλ IF=1000mA 30 nm
 Viewing Half Angle  θ½  IF=100mA  ±65 deg
 Rise Time tr IF=1000mA 280 ns
 Fall Time tf IF=1000mA 280 ns
* Measured by S3584-08
** Measured by CIE217-2007 Condition B

New “Power White” Up to 260 Lumen SMD Led

November 2014, Santa Clara, CA…Marubeni-OPTO (Marubeni America Corp, Optoelectronic Products), your leader in LED and Sensor technologies, now introduces a new series of high-power leadless surface-mount White LEDs, packaged in a micro-miniature 3.5 x 3.5 mm device outline with a height of only 2.6 mm. The new lead (Pb) free RoHS compliant chip-scale Top LED EDC Series package style employs highly diffusely reflective rugged ceramics with a domed silicone lens for maximum durability and lifetime. The high-brightness LED technology utilizes the latest in AlInGaN MOCVD (metal-organic chemical vapor deposition) epitaxial wafer technology that is used to yield a 1000 x 1000 micron compound semiconductor die with integrated photo-conversion phosphor over-lay to produce a pure white emission color approximating equal-energy white (CIE 1931 x = 0.32; y = 0.33). Capable of being powered by up to 700mA forward current, the device produces a luminous flux of 110 lumens at 1 Watt steady-state drive (350 mA) and 260 lumens in pulsed operation. The wide ±57° viewing angle makes this device ideal for solid-state new design or redesign general lighting product applications.

       Electro-Optical Characteristics [Ta=25°C]
 Item Symbol Condition Minimum Typical Maximum Unit
 Forward Voltage VF  IF=350mA  3.1  3.5   V
 VFP  IFP=1000mA  3.6
 Radiated Power   PO  IF=350mA  360   mW
 IFP=1000mA  850
 Luninous Flux  IF=350mA  110   lm
 IFP=1000mA  260
 Color Temperature  Tc  IF=350mA  6000  K
 Chromaticity  x  IF=350mA  0.32
y IF=350mA 0.33
Viewing Half Angle θ½ IF=350mA ±57 deg
Rise Time tr IF=350mA 45 ns
Fall Time tf IF=350mA 80 ns
The small size and product characteristics are also ideal for;
– Signaling for rescue
– Smart phone camera flash
– Directional wearable lighting
– Various types of handheld flashlights via single devics or arrayed device formats
– The device easily optically couples with sold-body waveguides for highly-uniform BLU(backlight unit) applications that require high luminance and small bezel dimensions.

PDF LINK :

UP TO 260 LUMEN SMD LED

Near-UV 405nm(λP) Power LED

Smallest, Highest POWER IR LED